Author Affiliations
Abstract
State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
The optical saturation characteristics in the germanium-on-silicon (Ge-on-Si) photodetector are studied for the first time, to the best of our knowledge. The relationship between the optical saturation characteristics and the optical field distribution in the Ge layer is illustrated by the simulation. This theory is verified by comparative experiments with single-injection and dual-injection structures. The dual-injection photodetector with a more balanced and uniform optical field distribution has a 13% higher responsivity at low optical power and 74.4% higher saturation current at 1550 nm. At higher optical power, the bandwidth of the dual-injection photodetector is five times larger than that of the single-injection photodetector.
250.0040 Detectors 040.5160 Photodetectors 
Chinese Optics Letters
2018, 16(7): 072502
Author Affiliations
Abstract
State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
We review current silicon photonic devices and their performance in connection with energy consumption. Four critical issues are identified to lower energy consumption in devices and systems: reducing the influence of the thermo-optic effect, increasing the wall-plug efficiency of lasers on silicon, optimizing energy performance of modulators, and enhancing the sensitivity of photodetectors. Major conclusions are (1) Mach–Zehnder interferometer-based devices can achieve athermal performance without any extra energy consumption while microrings do not have an efficient passive athermal solution; (2) while direct bonded III–V-based Si lasers can meet system power requirement for now, hetero-epitaxial grown III–V quantum dot lasers are competitive and may be a better option for the future; (3) resonant modulators, especially coupling modulators, are promising for low-energy consumption operation even when the power to stabilize their operation is included; (4) benefiting from high sensitivity and low cost, Ge/Si avalanche photodiode is the most promising photodetector and can be used to effectively reduce the optical link power budget. These analyses and solutions will contribute to further lowering energy consumption to meet aggressive energy demands in future systems.
Energy transfer Energy transfer Integrated optics devices Integrated optics devices Semiconductor lasers Semiconductor lasers Coupled resonators Coupled resonators Avalanche photodiodes (APDs) Avalanche photodiodes (APDs) 
Photonics Research
2015, 3(5): 05000B28

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